Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

57A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

48W Tc

Turn Off Delay Time  

9.1 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.35V @ 25μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2008

JESD-609 Code  

e3

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

8.7MOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

48W

Case Connection  

DRAIN

Turn On Delay Time  

8.4 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8.7m Ω @ 21A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

900pF @ 13V

Gate Charge (Qg) (Max) @ Vgs  

10nC @ 4.5V

Rise Time  

38ns

Vgs (Max)  

±20V

Fall Time (Typ)  

8.9 ns

Continuous Drain Current (ID)  

57A

Threshold Voltage  

1.9V

JEDEC-95 Code  

TO-252AA

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

42A

Drain to Source Breakdown Voltage  

25V

Dual Supply Voltage  

25V

Avalanche Energy Rating (Eas)  

67 mJ

Recovery Time  

26 ns

Nominal Vgs  

1.9 V

Height  

2.3876mm

Length  

6.7056mm

Width  

6.22mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free